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IRG4PSC71UD - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations.
  • IGBT co-packaged with.

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PD - 91682A IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 • Creepage distance increased to 5.35mm C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.